Features

FDR8305N — MOSFET N-CH DUAL 20V 4.5A SSOT-8

Manufacturer: Fairchild Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 4.5A  •  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  •  FET Polarity: 2 N-Channel (Dual)  •  FET Feature: Logic Level Gate  •  Power - Max: 800mW  •  Mounting Type: Surface Mount  •  Package / Case: 8-SSOT, SuperSOT-8
Datasheet
Cross-referenceSTC6NF30V, IRF7530   Technical Specification »

Suppliers of «FDR8305N»

Part NoManufacturerPriceStock
ООО "Интегральные схемы"FDR8305N––from 7 days
AspectFDR8305N––from 7 days
Icseek Global LimitedFDR8305N (Оригинальный и наличный и новый)FAIR–2900
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!FDR8305N (Package: : LSOP8/3.3MM; , D/c: : 22+)ON–45000
Digi-ic_SMART PIONEER ElectronicFDR8305N (MOSFET 2N-CH 20V 4.5A SSOT-8 Подробнее)onsemi–168900
Acme Chip Technology Co.,LimitedFresh data!FDR8305N (MOSFET 2N-CH 20V 4.5A SUPERSOT-8)onsemi–5158
Geefook (shenzhen) Electronic Co., LtdFDR8305N (Подробнее)onsemi–35000