Supplier | Part No | Manufacturer | Price | Stock | |
| Geefook (shenzhen) Electronic Co., Ltd | FQI4N25TU
Подробнее | onsemi | | 35000 | |
| Icseek Global Limited | FQI4N25TU
Оригинальный и наличный и новый | FAIRCHILD | | 5100 | |
HongKong Teyou Huicheng Electronic Technology Limited | FQI4N25
Package: : TO262; , D/c: : 22+ | FAIRCHILD | | 45000 | |
| Kontest | FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK Подробнее | Fairchild Semiconductor | | | |
| SHENZHEN SHENGYU ELECTRONICS TECHNOLOGY LIMITED | FQI4N25
TO-262 | FAIRCHILD | | 3978 | |
FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK | ON Semiconductor | 0.17$ | 6794 | |
FQI4N25TU
Compliant Through Hole 22 ns Lead Free 45 ns 1.75 Ω TO-262-3 3.6 A | onsemi | 0.17$ | 4749 | |
FQI4N25TU
N-CHANNEL POWER MOSFET | Rochester Electronics | 0.17$ | 7796 | |
FQI4N25TU
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor | 0.17$ | 6233 | |
| Shenzhen Augswan Electronics Co., LTD. | FQI4N25
TO-262 | FAIRCHILD | | 3874 | |
FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK | ON Semiconductor | 0.17$ | 6967 | |
FQI4N25TU
Compliant Through Hole 22 ns Lead Free 45 ns 1.75 Ω TO-262-3 3.6 A | onsemi | 0.17$ | 7274 | |
FQI4N25TU
N-CHANNEL POWER MOSFET | Rochester Electronics | 0.17$ | 7009 | |
FQI4N25TU
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor | 0.17$ | 6868 | |
| "SINERGY-DISTRIBUTION" LLC | FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK | ON Semiconductor | | | |
FQI4N25TU
N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | | 1175 | |
|
| Acme Chip Technology Co.,Limited | FQI4N25
TO-262 | FAIRCHILD | | 3879 | |
FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK | ON Semiconductor | 0.17$ | 7825 | |
FQI4N25TU
Compliant Through Hole 22 ns Lead Free 45 ns 1.75 Ω TO-262-3 3.6 A | onsemi | 0.17$ | 5112 | |
FQI4N25TU
N-CHANNEL POWER MOSFET | Rochester Electronics | 0.17$ | 5275 | |
FQI4N25TU
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor | 0.17$ | 4422 | |
| ООО "Интегральные схемы" | FQI4N25 | | | from 7 days | |
| FQI4N25TU | | | from 7 days | |
| Aspect | FQI4N25 | | | from 7 days | |
| FQI4N25TU | | | from 7 days | |
| CHIP DIGGER LIMITED | FQI4N25
TO-262 | FAIRCHILD | | 3713 | |
FQI4N25TU
MOSFET N-CH 250V 3.6A I2PAK | ON Semiconductor | 0.17$ | 6936 | |
FQI4N25TU
Compliant Through Hole 22 ns Lead Free 45 ns 1.75 Ω TO-262-3 3.6 A | onsemi | 0.17$ | 6679 | |
FQI4N25TU
N-CHANNEL POWER MOSFET | Rochester Electronics | 0.17$ | 6099 | |
FQI4N25TU
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor | 0.17$ | 6647 | |
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