Supplier | Part No | Manufacturer | Price | Stock | |
VolgaIntegral LLC | FQD2N80TM | On Semiconductor | | 17500 | |
HK CARLACCI TRADING CO.,LIMITED | FQD2N80TM Package: : TO-252-3 | ON | | 6126 | |
Geefook (shenzhen) Electronic Co., Ltd | FQD2N80TM Подробнее | onsemi | | 35000 | |
FQD2N80TF Подробнее | onsemi | | 35000 | |
FQD2N80TM_WS Подробнее | onsemi | | 35000 | |
ООО ВКС-Электроникс | FQD2N80 | Fairchild Semiconductor | | 2336 | |
FQD2N80TM-NL | Fairchild Semiconductor | | 5076 | |
Shenzhen Dali Electronics Co., Ltd | FQD2N80TM Package: : o riginal new; , D/c: : 22+ | ON | | 1500 | |
FQD2N80TM Package: : o riginal new; , D/c: : 22+ | ON | | 1500 | |
YUHUA TECHNOLOGY | FQD2N80TM China HongKong - 3 days; , Package: : TO-252; , D/c: : 21+ | ON | | 2000 | |
Icseek Global Limited | FQD2N80 Оригинальный и наличный и новый | FAIRCHILD | | 5100 | |
FQD2N80TM Оригинальный и наличный и новый | FAIRCHILD | | 5100 | |
FQD2N80TF Оригинальный и наличный и новый | FAIRCHILD | | 5100 | |
FQD2N80TM_WS Оригинальный и наличный и новый | ON | | 5100 | |
RYX ELECTRONIC LIMITED | FQD2N80 Package: : TO-2523L(DPAK); , D/c: : 2021+ | ONSEMI | | 20000 | |
HONGTE TECHNOLOGY LIMITED | FQD2N80 D/c: : SOT252 Подробнее | FAIRCHILD | | 10000 | |
FQD2N80TM D/c: : DPAK-3TO-2 Подробнее | ON | | 10000 | |
HongKong Teyou Huicheng Electronic Technology Limited | FQD2N80 Package: : TO252; , D/c: : 22+ | FAIRCHILD | | 45000 | |
FQD2N80C Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQD2N80TF Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQD2N80TM Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQD2N80TM-NL Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQD2N80/FQU2N80 Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQU2N80/FQD2N80 Package: : TO252; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
FQD2N80FQD2N80TMFQD2N80TF Package: : TO252; , D/c: : 22+ | ON/ | | 45000 | |
VESS ELECTRONICS COMPANY LIMITED | FQD2N80TM | ON | | 10000 | |
FQD2N80TM | ON | | 10000 | |
Electronic Control Systems | FQD2N80TM | | 90 RUB bulk: 75 RUB | 1947 | |
|
HK Future Electronic Co.,Ltd | FQD2N80TM TO-252; , D/c: : 22+ | ON | | 1500 | |
INTEGRA LLC | FQD2N80TM 3-5 недель; , Min order: : 200 $ | ON | | | |
STXW(HK) TECHNOLOGY LIMITED | FQD2N80TM Package: : 22+ | ON | | 3137 | |
IC STOCK TECHNOLOGY LIMITED | FQD2N80 D/c: : 1932+ | FAIRCHILD | | 4929 | |
FQD2N80TM D/c: : 21+19+ | ON | | 5010 | |
FQD2N80TM D/c: : 22+ | ON | | 7500 | |
Shenzhen Chuanlan Electronics Ltd. | FQD2N80TM 3days TO-252-3 22+ | ON | | 4890 | |
ООО "Аркион" | FQD2N80TM от 4-х недель; , Package: : N/A; , Min order: : 1; , D/c: : 23+ | ON Semiconductor | | 15000 | |
HK ALL-WIN TECHNOLOGY LIMITED | FQD2N80TM electronic components; , D/c: : 22+/23+ | Fairchild | | 9061 | |
Hightech Semiconductor Co Ltd | FQD2N80TM TO252 2213+ Подробнее | ON | | 10000 | |
King-YiKu Optoelectronics Co., Ltd. | FQD2N80 22+; , D/c: : 15787 | FAIRCHILD | 252$ | | |
FQD2N80TM 22+; , D/c: : 31031 | ON/ | 252$ | | |
Kontest | FQD2N80TM Подробнее | | 129.6 RUB | 1557 | |
FQD2N80 800v n-channel mosfet Подробнее PDF | FAIRCHILD SEMICONDUCTORS | | | |
FQD2N80TF Подробнее | Fairchild Semiconductor | | | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK Подробнее | Fairchild Semiconductor | | | |
Base of Electronics | FQD2N80TM | | 125.1 RUB | 1947 | |
Shenzhen Augswan Electronics Co., LTD. | FQD2N80 | onsemi | 0.38$ | 19264 | |
FQD2N80 | Fairchild | 0.38$ | 18289 | |
FQD2N80C TO-252 | FAIRCHILD | | 4089 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | onsemi | | 9276 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | onsemi | | 21889 | |
FQD2N80TM-NL TO-252 | FAIRCHILD | | 5970 | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | onsemi | | 6512 | |
|
ООО "ЭНЕРГОФЛОТ" | FQD2N80TM | | 117 RUB | 1947 | |
Acme Chip Technology Co.,Limited | FQD2N80 | onsemi | 0.38$ | 19142 | |
FQD2N80 | Fairchild | 0.38$ | 16401 | |
FQD2N80C TO-252 | FAIRCHILD | | 2798 | |
FQD2N80TF Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor | | 9152 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | onsemi | | 8733 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | onsemi | | 24690 | |
FQD2N80TM | ON | | 20656 | |
FQD2N80TM FAIRCHILD SEMICONDUCTOR FQD2N80TM N CHANNEL MOSFET, 800V, 1.8A | ON Semiconductor | | 23021 | |
FQD2N80TM-NL TO-252 | FAIRCHILD | | 5585 | |
FQD2N80TM_WS | Fairchild Semiconductor | | 4497 | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | onsemi | | 6758 | |
Delta Electronics | FQD2N80TM., Транзистор | | 375 RUB | 6-8 weeks | |
FQD2N80TM | | 112.5 RUB | 1947 | |
"SINERGY-DISTRIBUTION" LLC | FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | 2500 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | 1258.14 RUB bulk: 1133.71 RUB mult: 884.85 RUB | 3509 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | 1258.14 RUB bulk: 1133.71 RUB mult: 884.85 RUB | 3509 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | | |
ООО "Интегральные схемы" | FQD2N80 | | | from 7 days | |
FQD2N80394-3823 | | | from 7 days | |
FQD2N80TF | | | from 7 days | |
FQD2N80TFNL | | | from 7 days | |
FQD2N80TM | | | from 7 days | |
FQD2N80TM-NL | | | from 7 days | |
FQD2N80TM_Q | | | from 7 days | |
FQD2N80TM_WS | | | from 7 days | |
Aspect | FQD2N80 | | | from 7 days | |
FQD2N80394-3823 | | | from 7 days | |
FQD2N80TF | | | from 7 days | |
FQD2N80TFNL | | | from 7 days | |
FQD2N80TM | | | from 7 days | |
FQD2N80TM-NL | | | from 7 days | |
FQD2N80TM_Q | | | from 7 days | |
FQD2N80TM_WS | | | from 7 days | |
ELITAN | FQD2N80TM@ONS Продажи Юрлицам, ИП, Самозанятым, Подотчетникам. Круглосуточно без выходных. Для просмотра цен и заказа нажмите-> Подробнее | | | Stock | |
SHENZHEN SHENGYU ELECTRONICS TECHNOLOGY LIMITED | FQD2N80 | onsemi | 0.38$ | 18309 | |
FQD2N80 | Fairchild | 0.38$ | 17312 | |
FQD2N80C TO-252 | FAIRCHILD | | 4238 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | 8267 | |
FQD2N80TF Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor | | 9394 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | onsemi | | 9159 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | onsemi | | 22722 | |
FQD2N80TM-NL TO-252 | FAIRCHILD | | 7395 | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | ON Semiconductor | | 4483 | |
FQD2N80TM_WS | Fairchild Semiconductor | | 4853 | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | onsemi | | 7143 | |
CHIP DIGGER LIMITED | FQD2N80 | onsemi | 0.38$ | 19990 | |
FQD2N80 | Fairchild | 0.38$ | 15941 | |
FQD2N80C TO-252 | FAIRCHILD | | 3164 | |
FQD2N80TF MOSFET N-CH 800V 1.8A DPAK | onsemi | | 8136 | |
FQD2N80TM MOSFET N-CH 800V 1.8A DPAK | onsemi | | 20285 | |
FQD2N80TM-NL TO-252 | FAIRCHILD | | 6202 | |
FQD2N80TM_WS MOSFET N-CH 800V 1.8A DPAK | onsemi | | 4302 | |