Supplier | Part No | Manufacturer | Price | Stock | |
Geefook (shenzhen) Electronic Co., Ltd | FQB70N10TM_AM002 Подробнее | onsemi | | 35000 | |
Icseek Global Limited | FQB70N10 Оригинальный и наличный и новый | FAIRCHILD | | 5100 | |
FQB70N10TM Оригинальный и наличный и новый | FSC | | 5100 | |
FQB70N10TM_AM002 Оригинальный и наличный и новый | ON | | 5100 | |
GETTINGWIN CO., LIMITED | FQB70N10TM Package: : New Original; , D/c: : DC 2023+ | ON | | 18100 | |
HongKong Teyou Huicheng Electronic Technology Limited | FQB70N10 Package: : TO263; , D/c: : 22+ | FAIRCHILD | | 45000 | |
FQB70N100 Package: : TO263; , D/c: : 22+ | FAIRCHILD/ | | 45000 | |
Digi-ic_SMART PIONEER electronic | FQB70N10TM N-CHANNEL POWER MOSFET Подробнее | Fairchild Semiconductor | | 150702 | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK Подробнее | onsemi | | 159953 | |
IC STOCK TECHNOLOGY LIMITED | FQB70N10 D/c: : 1932+ | FAIRCHILD | | 445 | |
King-YiKu Optoelectronics Co., Ltd. | FQB70N10 22+; , D/c: : 1445 | FAIRCHILD | 263$ | | |
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Стандарт СИЗ | FQB70N10 (ST-STB60NF10T4) Подробную информацию уточняйте у наших менеджеров. | Texas Instruments | | Stock | |
Kontest | FQB70N10TM Подробнее | FAIRCHILD | | | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK Подробнее | Fairchild Semiconductor | | | |
"SINERGY-DISTRIBUTION" LLC | FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK | ON Semiconductor | | | |
FQB70N10TM N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | | 800 | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK | ON Semiconductor | | | |
Acme Chip Technology Co.,Limited | FQB70N10 TO263 | FAIRCHILD | | 14962 | |
FQB70N10TM Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor | | 5966 | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK | onsemi | | 4679 | |
ООО "Интегральные схемы" | FQB70N10 | | | from 7 days | |
FQB70N10TM | | | from 7 days | |
FQB70N10TM_AM002 | | | from 7 days | |
Aspect | FQB70N10 | | | from 7 days | |
FQB70N10TM | | | from 7 days | |
FQB70N10TM_AM002 | | | from 7 days | |
Shenzhen Augswan Electronics Co., LTD. | FQB70N10 TO263 | FAIRCHILD | | 11005 | |
FQB70N10TM Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor | | 5848 | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK | onsemi | | 4171 | |
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CHIP DIGGER LIMITED | FQB70N10 TO263 | FAIRCHILD | | 13123 | |
FQB70N10TM Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor | | 5120 | |
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK | onsemi | | 3637 | |