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FQD2N60C / FQU2N60C www.onsemi.com 2 THERMAL CHARACTERISTICS Symbol Parameter Value Unit R JC Thermal Resistance, Junction−to−Case, Max. 2.87 °C/W R JA Thermal Resistance, Junction−to−Ambient (minimum pad of 2 oz copper), Max. 110 °C/W
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This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Waiting.
Order today, ships today. FQU2N60CTU – N-Channel 600 V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Through Hole IPAK from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
FQD2N60C / FQU2N60C — N-Channel QFET ® MOSFET www.onsemi.com 2 Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted. NOTES: 1.Repetitive Rating : Pulse width limited by maximum junction temperature.
FQU2N60 Product details. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and ...
FQD2N60 / FQU2N60 QFETTM FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
November 2015 FQD2N60C / FQU2N60C — N-Channel QFET ® MOSFET ©2003 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. 1.4 1 www.fairchildsemi.com
