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View FQB, FQI2NA90 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
Features. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Substitutes (1) Additional Resources. Order today, ships today. FQB2NA90TM – N-Channel 900 V 2.8A (Tc) 3.13W (Ta), 107W (Tc) Surface Mount D²PAK (TO-263) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- QFET®
- Tape & Reel (TR)
FQI2NA90 900V N-channel QFET . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior
FQB2NA90 / FQI2NA90 FQB2NA90 / FQI2NA90 900V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Buy FQI2NA90 FAIRCHILD , Learn more about FQI2NA90 900V N-Channel MOSFET, View the manufacturer, and stock, and datasheet pdf for the FQI2NA90 at Jotrin Electronics.
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