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  1. F28F010-120 Product details. 28F010 1024K (128K X 8) CMOS FLASH MEMORY. Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology.

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  2. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel's 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs. Extended erase and program cycling capability is designed into Intel's ETOX (EPROM Tunnel Oxide) process technology.

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  4. Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumption.

  5. E28F010-120, E28F010-150, E28F010-65, E28F010-90, F28F010-65: Download F28F010-120 datasheet from Intel: pdf 409 kb

  6. Technical Specifications. Intel P28F010-120 technical specifications, attributes, and parameters. 128K X 8 FLASH 12V PROM 120 ns PDIP32. Flash, 128KX8, 120ns, PDIP32. Contact for details.

  7. E28F010-120, E28F010-150, E28F010-65, E28F010-90, F28F010-120: Download P28F010-120 datasheet from Intel: pdf 409 kb

  8. F28F010-120 Datasheet : 28F010 1024K (128K X 8) CMOS FLASH MEMORY, F28F010-120 PDF VIEW Download Intel, F28F010-120 12 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits