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C30809 Product details Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.
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N-type Silicon PIN Photodetectors. RoHS Compliance. The C30807EH, C30808EH, C30822EH, C30809EH, and C30810EH Type PIN Photodetectors are designed and built to be fully compliant with the European Union Directive 2011/65/EU – Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. Warranty.
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View C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types by Excelitas Technologies datasheet for technical specifications, dimensions and more at DigiKey.
C30809 N-type Silicon Pin Photodetectors . Description. This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this
C30807, C30808, C30809, C30810, C30822, C30831 Features •Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 •Low Operating Voltage VR = 45V •Anti-Reflection Coated to Enhance Responsivity at 900 nm •Hermetically-Sealed Packages •Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types)
EVERYTHINGIN ANEWLIGHT.DescriptionThis family of N-type silicon p-i-nphotodiodes is designed for use in a widevariety of broad band low light levelapplications covering the spectral rangefrom below 400 to over 1100 nm. Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
c30807, c30808, c30809, c30810, c30822, c30831 Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts 2 , unless otherwise specified
