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T436416B : Density = 64M ;; Org. = 4M X 16 ;; Voltage = 2.7-3.6V ;; Speed (ns) = 10/20 ;; Pins/package = 54pin-TSOP-II, Taiwan Memory Technology (tmTECH) ...
The T436416D SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous ...
T436416B - Density = 64M ; Org. = 4M X 16 ; Voltage = 2.7-3.6V ; Speed (ns) = 10/20 ; Pins/package = 54pin-TSOP-II; T436416B-10C - Density = 64M ; Org. = 4M ...
Datasheet Archive is an online archive of electronic component datasheets and application notes for Taiwan Memory Technology Parts starting with 'T'.
T436416B TMT - Density = 64M ; Org. = 4M X 16 ; Voltage = 2.7-3.6V ; Speed (ns) = 10/20 ; Pins/package = 54pin-TSOP-II; T436416B-10C TMT - Density = 64M ; Org.
€2.39
Prekės kodas: t436416; Žymos: Aprašymas Papildoma Informacija Atsiliepimai. Informacija. Redmi 10A 10C dėklo odinis atverčiamas dėklas, skirtas Xiaomi Redmi 10 ...
Спецификация на продукта. sku: t436416. Модел 7: За ... 5.53лв. Културизъм Фитнес Фитнес Калъф за горещ заден капак за Xiaomi Redmi 12 12C 9C 10C Redmi Забележка ...