K4H511638B-G(Z)C/LCC,B3,A2,B0 DDR SDRAM 512Mb B-die (x4, x8, x16) The K4H511638B is 536870912 bits of double data rate synchronous DRAM organized as 4 x ...
The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance ...
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333. • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400. • Double-data-rate architecture; ...
K4H510838B-G(Z)C/LCC,B3,A2,B0 DDR SDRAM 512Mb B-die (x4, x8, x16) The K4H510838B is 536870912 bits of double data rate synchronous DRAM organized as 4 x ...
s: Frequency: 25MHz ; Package / Case: 4-SMD, No Lead (DFN, LCC) ; Packaging: Cut Tape (CT) ; Type: XO (Standard) ; Operating Temperature: -20°C ~ 70°C ; ...
Rev. 1.3 June. 2005DDR SDRAMDDR SDRAM 512Mb B-die (x4, x8, x16)• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333• VDD : 2.6V ± 0.1V, ...
M470L3324BT(U)0-C(L)CC/B3/A2/B0. 256MB. 32M x 64. 32Mx16 (K4H511638B) * 4EA. 1,250mil. M470L6524BT(U)0-C(L)CC/B3/A2/B0. 512MB. 64M x 64. 32Mx16 (K4H511638B) * ...
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Part #: K4H511638B-G. Download. File Size: 392Kbytes. Page: 24 Pages. Description: 512Mb B-die DDR SDRAM Specification. Manufacturer: Samsung semiconductor.
Missing: B3, A2,
K4H510438B-GC/LA2. 512Mb B-die DDR SDRAM Specification. 厂商名称：SAMSUNG(三星). 厂商官网：http://www.samsung.com/Products/Semiconductor/.
Samsung. K4h511638 Datasheet. You can find K4h511638 Datasheet. 8,000,000+ Users / Month.