Compare UPD23C32340GZ-XXX-MJH by undefined vs K3P6V1000D-YC by undefined. View differences in part data attributes and features.

K3P6V1000D-YC Samsung Semiconductor ; NEC ELECTRONICS AMERICA INC · 12 X 20 MM, LEAD FREE, PLASTIC, TSOP1-48 · compliant · 100 ns · 8 ; SAMSUNG SEMICONDUCTOR INC.

K3P6V1000D Description = K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ;; Organization = 4Mx8,2Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(30) ;; Package ...

The K3P6V(U)1000D-YC(E) and K3P6S1000D-YC(E) are fully static mask programmable ROM fabricated using silicon gate. CMOS process technology, and is organized ...

K3P6V1000D : 32M bit. = K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ;; Organization = 4Mx8,2Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(30) ;; Package ...

K3P6V1000D : 32M bit. = K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ;; Organization = 4Mx8,2Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(30) ;; Package ...

Datasheets for B-TC ; 15, K3P6V1000B-GC, K3P6V1000B-TC(E), 32M-Bit (4Mx8/2Mx16) CMOS MASK ROM Data Sheet, Samsung Electronic ; 16, K3P6V1000B-GC, K3P6V1000B-TC(E) ...

K3P6V1000D-YE · K404S · K3NR-PB1C · K41063153SHM0G079 · K4000 · K3P5C1000F-TC100 · K3TXVD31A · K3TJA116R · K41050472MKM0E060 · K41100103SKM0H105 · K3P7C1000B- ...

K3P6V1000D-YE10规格参数 ; 端子面层, Tin/Lead (Sn/Pb) ; 端子形式, GULL WING ; 端子节距, 0.5 mm ; 端子位置, DUAL ; 处于峰值回流温度下的最长时间, NOT SPECIFIED.

Datasheets for B-G ; 676, K3P6V1000B-GC, K3P6V1000B-TC(E), 32M-Bit (4Mx8/2Mx16) CMOS MASK ROM Data Sheet, Samsung Electronic ; 677, K3P6V1000B-GC, K3P6V1000B-TC(E) ...