The K3N7V(U)4000B-DC is a fully static mask programmable. ROM organized 4,194,304x16 bit. It is fabricated using silicon- gate CMOS process technology.

K3N7V4000B-DC12 · K41050683S6M0J105 · K3PG100 · K3SA110MS1P1230 · K41050103MLM0E060 · K3N9V1000A-YC12 · K409532200J0G · K3Y472MQ47CADQA · K41025223M0M0E079

K3N7V4000B-DC12 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current ...

Description courte. FEATURES. · Switchable organization x 16(word mode)· Fast access time 3.3V Operation L=100pF 3.0V Operation : 120ns(Max.)@ ...

K3N7V4000B-DC10 K3N7V4000B-DC12 K3N7V4000C-DC10 K3N7V4000C K3N7V4000C-DC12 K3N9U1000A-YC12 K3N9U1000A K3N9U1000M-YC12 K3N9U1000M K3N9U4000A-GC12 K3N9U4000A