The K3N7V(U)1000C-GC is a fully static mask programmable. ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x ...
K3N7U1000C Description = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package ...
K3N7U1000C : 64M bit. = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package ...
K3N6V1000F-GC10 datasheet - Description = K3N6V1000F ...
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K3N7U1000C Description = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package ...
K3N7U1000C : 64M bit. = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package ...
K3N7U1000C-GC12 · K3P4U1000F-TC12 · K3P5C1000F-DC100 · K408536000J0G · K40F1C-P04LFG0-300S · K40553C200J0G · K3P6C1000F-TC15 · K3P5C1000F-DC150 · K3TJ-A111R
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K3N7U1000C-GC12规格参数 ; 端子面层, Tin/Lead (Sn/Pb) ; 端子形式, GULL WING ; 端子节距, 1.27 mm ; 端子位置, DUAL ; 处于峰值回流温度下的最长时间, NOT SPECIFIED.
W29EE512P-70-TR datasheet - Specifications: Memory Category ...
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K3N7U1000C : 64M bit. = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package ...
K3N7U1000C Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP ...