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The K3N7C1000B-YC is a fully static mask programmable. ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 ...
The is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either x 8 bit(byte mode) x 16 bit(word mode) ...
Datasheets for N7C ; 2, IRHN7C50SESCS, 600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package ; 3, K3N7C1000B-GC, K3N7C1000B-TC, K3N7C1000B ...
No. Part Name, Description, Manufacturer. 1, K3N7C1000B-GC, K3N7C1000B-TC, K3N7C1000B, 64M-Bit (8Mx8/4Mx16) CMOS MASK ROM Data Sheet, Samsung Electronic.
Datasheet Catalog - Page 4 ; 328, K3N7C1000B-GC, K3N7C1000B-TC, K3N7C1000B, 64M-Bit (8Mx8/4Mx16) CMOS MASK ROM Data Sheet ; 329, K3N7C4000B-DC, 64M-Bit (4Mx16) ...
Symbol elementu: K3N7C1000B-YC. Pozostałe symbole: K3N7C1000B-GC; K3N7C1000B-TC. Opis: 64M-Bit (8Mx8/4Mx16) CMOS MASK ROM Data Sheet.
Pozostałe symbole: K3N7C1000B-GC; K3N7C1000B-TC ; Opis: 64M-Bit (8Mx8/4Mx16) CMOS MASK ROM Data Sheet ; Pobierz: K3N7C1000B-YC.pdf ; Rozmiar pliku: 48 KB / 3 stron.
K3N7C1000B-GC, K3N7C1000B-TC, K3N7C1000B · Samsung Electronics: 64M-Bit (8Mx8/4Mx16) CMOS MASK ROM Data Sheet: Product Attributes
Two 0.33uF and one 0.1uF decoupling capacitors. K3N7C1000B : 64M bit. = K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage( ...