The K3N4V(U)1000E-D(G)C is a fully static mask programma- ble ROM fabricated using silicon gate CMOS process technol-.
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K3N4V1000E : Description = K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ;; Organization = K 3 N 4 V 1000E · K3N4V1000E-DC10 : Description = K3N4V1000E 8M ...
K3N4V1000E - 8M-Bit (1Mx8 / 512Kx16) CMOS MASK ROM. 31.67Kb • 3 pages. K3N5C1000D - 16M-Bit (2Mx8 / 1Mx16) CMOS MASK ROM. 98.66Kb • 4 pages. K3N5C1000E - 16M ...
K3N4V1000E - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP ...
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Specifications ; Memory Size, 16Mbit, Memory Organization ; Memory Interface, SPI - Quad I/O · Clock Frequency ; Write Cycle Time - Word, Page, 50µs, 3ms, Voltage - ...
It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N4V(U)1000E-DC is packaged a 42-DIP and the a 44-SOP.
Маркировка, K3N4V1000E. Производитель, Samsung semiconductor (www.samsung.com). Комментарий, 8M-Bit (1Mx8 / 512Kx16) CMOS MASK ROM.
Specifications ; Memory Interface, SPI - Quad I/O, QPI, Clock Frequency ; Write Cycle Time - Word, Page, -, Voltage - Supply ; Operating Temperature, -40°C ~ 85°C ...