2M x 16 bit Page Mode Uni-Transistor CMOS RAM. GENERAL DESCRIPTION. The K1S3216BCD is fabricated by SAMSUNG′s advanced. CMOS technology using one transistor ...

K1S3216BCD 2M x 16 bit Page Mode Uni-Transistor CMOS RAM The K1S3216BCD is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell.

2Mx16 bit Page Mode Uni-Transistor Random Access Memory · K1S3216BCD datasheet pdf Samsung Electronic Download K1S3216BCD datasheet from

K1S3216BCD · SAMSUNG-K1S3216BCD Datasheet 168Kb / 10P, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory. More results. Similar Description - K1S3216B1C-I ...

... K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one ... 35mA PKG Type K1S3216BCD-I Industrial(-40~85°C) 1.7~2.0V 48-FBGA-6.00x8.00 PIN ...

Part No. K1S3216BCD. Description, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory. File Size, 164.93K / 10 Page. Maker, Samsung Electronic

K1S3216BCD · SAMSUNG-K1S3216BCD Datasheet 168Kb / 10P, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory. K1S32161CC · SAMSUNG-K1S32161CC Datasheet 185Kb ...

PDF K1S3216BCD Data sheet ( Hoja de datos ) ; Descripción, 2Mx16 bit Page Mode Uni-Transistor Random Access Memory ; Fabricantes, Samsung semiconductor ; Logotipo.

K1S3216BCD-I : 2M x 16 bit Page Mode Uni-Transistor CMOS RAM The K1S3216BCD is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell ...