Search Results

  1. 80V N-Channel MOSFET, FQI44N08 Datasheet, FQI44N08 circuit, FQI44N08 data sheet : FAIRCHILD, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  2. Description: MOSFET. Lifecycle: Obsolete. Datasheet: FQI44N10TU Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. Stock: Specifications. Select at least one checkbox above to show similar products in this category.

  3. FQI44N08 80V N-Channel MOSFET - Fairchild Semiconductor FQI44N10 100V N-Channel MOSFET - Fairchild Semiconductor @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.

  4. Symbol Parameter FQB44N08 / FQI44N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 44 A - Continuous (TC = 100°C) 31.1 A IDM Drain Current - Pulsed (Note 1) 176 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ IAR Avalanche Current (Note 1) 44 A EAR Repetitive Avalanche ...

  5. FQI44N08 80V N-channel QFET . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior

  6. FQI44N08: Descripción Electrónicos 80V N-Channel MOSFET: Download 9 Pages: Scroll/Zoom: 100% : Fabricante Electrónico: FAIRCHILD [Fairchild Semiconductor] Página de inicio: http://www.fairchildsemi.com: Logo

  7. FQH44N10 www.onsemi.com 5 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) BV DSS, (Normalized) Drain − Source Breakdown Voltage D=0.5 0.02 0.2 0.05 0.1 0.01 t 1 P DM t 2 VDS, Drain−Source Voltage (V)