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FDS6673BZ is a P-Channel MOSFET with low RDS(on) and high ESD protection for power management and load switching applications. It has a SOIC8 package, a -30 V drain to source voltage, and a -25 V gate to source voltage range.
FDS6673BZ – P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Onsemi
May 25, 2024 · FDS6673BZ onsemi / Fairchild MOSFET -30V P-Channel PowerTrench MOSFET datasheet, inventory, & pricing.
- Onsemi / Fairchild
- MOSFET
- onsemi
- Si
Overview. This P-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Waiting. Product Overview. Applications. Features.
FDS6673BZ onsemi / Fairchild MOSFET -30V P-Channel PowerTrench MOSFET datasheet, inventory & pricing.
- Onsemi / Fairchild
- MOSFET
- onsemi
- Si
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Computers and Portable Battery Packs. Notebook. Features.
View FDS6673BZ-F085 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
