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This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Waiting. Product Overview. Applications. This product is general usage and suitable for many different applications. Features. –0.6 A ...
FDG6306P. General Description. This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features. • −0.6 A, −20 V. ♦ RDS(ON) = 420 m.
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Order today, ships today. FDG6306P – Mosfet Array 20V 600mA 300mW Surface Mount SC-88 (SC-70-6) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
May 25, 2024 · 20 V. Id - Continuous Drain Current: 600 mA. Rds On - Drain-Source Resistance: 420 mOhms. Vgs - Gate-Source Voltage: - 12 V, + 12 V. Minimum Operating Temperature: - 55 C.
- onsemi
- MOSFET
- SMD/SMT
- Si
General Description. Features. This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications. Battery management. Load switch. S. G. D.
FDG6306P. P-Channel 2.5V Specified PowerTrenchÒ MOSFET. General Description. This P-Channel 2.5V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications Features.
Download the FDG6306P datasheet from onsemi. PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ