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May 8, 2023 · Features. • SIMPLIFIED AMPLIFIER DESIGN. • SUITABLE FOR BROAD BAND Applications. • LOW Crss. • LOW NOISE. • HIGH GAIN. Absolute maximum ratings ( Ta=25°C ) 1. Drain – Source Breakdown Voltage: Vdss = 65V. 2. Gate – Source Breakdown Voltage: Vgss = ±20V. 3. Drain Current: Id = 8A. 4. Power Dissipation: Pd = 70 W.
Part #: D2011UK. Download. File Size: 19Kbytes. Page: 2 Pages. Description: METAL GATE RF SILICON FET. Manufacturer: Seme LAB.
DIM mm Tol. Inches Tol. A 6.47 0.08 .255 .003 B 0.76 0.08 .030 .003 C 45° 5° 45° 5° D 0.76 0.08 .030 .003 E 1.14 0.08 .045 .003 F 2.67 0.08 .105 .003
D2011UK. OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET. Brand: Semelab. Data Sheet. Simplified amplifier design. Suitable for broad band applications. Low C (rss) Low noise. High gain. Specifications. Physical Data. Electrical Data. Resources & Technical Documents. All (9) 3D Model (0) Application Note (0) End Of Life (0)
D2011UK METAL GATE RF SILICON FET Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.
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Part #: D2011UK. Description: METAL GATE RF SILICON FET. File Size: 19.93 Kbytes. Manufacturer: Seme LAB.
