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  1. X28C010/X28HT010 features the JEDEC approved pin out for byte-wide memories, compatible with industry standard EEPROMs. The X28C010/X28HT010 supports a 256-byte page write operation, effectively providing a 19µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds. The X28C010/X28HT010 also features

  2. The Intersil X28C010/X28HT010 is a 128k x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device.

  3. X28C010 Xicor-Division of Intersil | Memory. Xicor-Division of Intersil. Integrated Circuits (ICs) | Memory. Need Help? Feedback. X28C010 Xicor-Division of Intersil Memory parts available at DigiKey.

  4. X28C010 Product details. Features. • Access time: 120ns. • Simple byte and page write. - Single 5V supply. - No external high voltages or VPP control. circuits. - Self-timed. • No erase before write. • No complex programming algorithms. • No overerase problem. • Low power CMOS. - Active: 50mA. - Standby: 500μA. • Software data protection.

  5. X28C010 Product details. The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for byte-wide memories ...

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  6. The Xicor X28C010 is a 128K x 8 E 2 PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable non-volatile memories the X28C010 is a 5V only device. The X28C010 features the JEDEC approved pinout for byte-wide memories, compatible with industry standard EPROMs.

  7. The X28C010 features the JEDEC approved pinout for bytewide memories, compatible with industry standard EPROMs. The X28C010 supports a 256-byte page write operation, effectively providing a 19µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds.