4M * 16. The 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system ...
W28J800 1Mx8,512x16. W28V400 512Kx8/256Kx16. W29C020 256Kx8. W29C022 · W29C040 512Kx8. W29C043 · W29EE011 128Kx8. W29EE012 · W29EE512 64Kx8. ISD2560G : Single- ...
Datasheet Archive is an online archive of electronic component datasheets and application notes for Winbond Electronics Parts starting with 'W' - Page 3.
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Description: 4Mbit (512K x 8) CMOS Flash Memory Features: Low Voltage Operation: 2.7V to 3.6V Fast Programming Time: 10μs per Byte High Reliability: 10000 ...
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The W27E512-45 is a 512Kbit (64K x 8) electrically-erasable programmable read-only memory (EEPROM) from Winbond. It is a low-voltage device that operates ...
Mar 14, 2007 · W28J800(BT/TT). NA. NA. YES. NA. NA. YES. W28J160(BT/TT). NA. NA. YES. NA. NA. YES. W28J320(BT/TT). NA. NA. YES. NA. NA. YES. W29EE512/W29C512A.
The document provides a cross-reference guide for Winbond flash memory chips and their competitor equivalents. It lists flash memory chips by density, part ...
Each chip is internally confi gured as aquad-bank DRAM withA syn chro nous interface. Each ofthe chip's 134,217,728-bit banks is or ga nized as 8,192rows by ...
GTCL030FM18-19S W28J800 23826K305C363D3 GTCL030LCF24-AJP 1NA-10386-TR1 W28-XQ1-10 GTCL030LCF20-7S 1NA132V GTCL030LCF20-27S GTCL030FF20-27P GTCL030G24-AJP ...
W28J800 W28J160 W28J161 W28J320* W28J321* W28F321*(TSOP) W28F321*(BGA) W28F641 存储器IC -FL 型号. W19B320S W19B32xM. W29C512A W29EE512 W29C011A W29EE011
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