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  1. www.alldatasheet.com › TIM1414-10LA-252TIM1414-10LA-252 Datasheet(PDF) - Toshiba Semiconductor

    TIM1414-10LA-252 Product details. FEATURES. HIGH POWER. P1dB=39.5dBm at 13.75GHz to 14.5GHz. HIGH GAIN. G1dB=5.5dB at 13.75GHz to 14.5GHz. BROAD BAND INTERNALLY MATCHED FET. HERMETICALLY SEALED PACKAGE. Similar Part No. - TIM1414-10LA -252. More results. Similar Description - TIM1414-10LA-252. More results. Link URL.

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  2. www.alldatasheet.com › TOSHIBA › TIM1414-10LATIM1414-10LA Datasheet(PDF) - Toshiba Semiconductor

    FEATURES. LOW INTERMODULATION DISTORTION. IM3=-45 dBc at Pout= 29.0dBm. HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz. HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz. BROAD BAND INTERNALLY MATCHED FET. HERMETICALLY SEALED PACKAGE. Similar Part No. - TIM1414-10LA. More results. Similar Description - TIM1414-10LA. More results. Link URL.

  3. datasheetspdf.com › 551794 › TIM1414-10LA-252TIM1414-10LA-252 Datasheet PDF - Toshiba

    TIM1414-10LA-252 Microwave Power GaAs FET - Toshiba @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. ( Privacy Policy & Contact )

  4. www.alldatasheet.com › TOSHIBA › TIM1414-30LTIM1414-30L Datasheet(PDF) - Toshiba Semiconductor

    tim1414-10la: 180kb / 4p: microwave power gaas fet tim1414-10la-252: 187kb / 4p: high power p1db=39.5dbm at 13.75ghz to 14.5ghz tim1414-15l: 483kb / 4p: microwave power gaas fet tim1414-18l: 138kb / 4p: microwave power gaas fet tim1414-18l-252: 43kb / 4p: microwave power gaas fet

  5. datasheetspdf.com › 551786 › TIM1414-10LATIM1414-10LA Datasheet pdf - Toshiba

    Jul 30, 2006 · TIM1414-10LA Datasheet pdf - Toshiba. DigiKey In Stock: Features. • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level. • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz. • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz. • Broadband internally matched. • Hermetically sealed pa... Similar Datasheet. INDEX :

  6. www.global.toshiba › content › damRF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

    MICROWAVE POWER GaAs FET. TIM1414-18L-252. FEATURES. ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER. P1dB= 42.0dBm at 13.75GHz to 14.5GHz. ・HIGH GAIN. G1dB= 6.0dB at 13.75GHz to 14.5GHz. ・LOW INTERMODULATION DISTORTION. IM3= -25dBc(Min.) at Pout= 36dBm (Single Carrier Level) ・HERMETICALLY SEALED PACKAGE. RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )

  7. www.digchip.com › datasheet › 710TIM1414-10 datasheet - Specifications: Transistor Type ...

    tim1414-10a: tim1414-10a-252: tim1414-10b: tim1414-10l: tim1414-10la: tim1414-10la-252: tim1414-15: tim1414-15-252: tim1414-15l: tim1414-18l: tim1414-18l-252: tim1414-2