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Sep 9, 2004 · STP11NM60. Features. 100% avalanche tested. Low input capacitance and gate charge. Low gate input resistance. Applications. • Switching applications. Description. These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology.
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N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package. Download datasheet Order Direct.
2 days ago · Description: MOSFET N-Ch 600 Volt 11 Amp. Complete Your Design. Datasheet: STP11NM60 Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. In Stock: 745. Stock: 745 Can Ship Immediately. Factory Lead-Time: 13 Weeks.
- Stmicroelectronics
Order today, ships today. STP11NM60 – N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Stmicroelectronics
- 497-2773-5-ND
- MOSFET N-CH 650V 11A TO220AB
- STMicroelectronics
STP11NM60 Product details. The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
Download the STP11NM60 datasheet from STMicroelectronics. N-channel 600 V, 0.4 Ohm, 11 A, TO-220, TO-220FP MDmesh(TM) Power MOSFET
General features. High dv/dt and avalanche capabilities. 100% avalanche tested. Low input capacitance and gate charge. Low gate input resistance. Description. The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
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