The STD5N20L utilizes the latest advanced de- sign rules of ST's proprietary STripFET™ technol- ogy. This is suitable for the most demanding DC. Motor ...
STD5N20 ; THERMAL DATA ; ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ; ON (1) ; -case Thermal Resistance Junction-case Max 2.77 °C/W.
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STD5N20. Packaging: Reel. Packaging: Cut Tape. Packaging: MouseReel. Brand: STMicroelectronics. Configuration: Single. Fall Time: 10 ns. Forward ...
Symbol. Parameter. Value. Unit. VDS. Drain-source Voltage (VGS = 0). 200. V. VDGR. Drain- gate Voltage (RGS = 20 kΩ). 200. V. VGS. Gate-source Voltage.
N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR □ TYPICAL RDS(on) = 0.7 Ω □ AVALANCHE RUGGED TECHNOLOGY □ 100% AVALANCHE TESTED
STD5N20. 200 V. < 0.8 Ω. 5 A. Symbol. Parameter. Value. Unit. VDS. Drain-source Voltage (VGS = 0). 200. V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). 200. V. VGS.
Part #, STD5N20_00. Download, STD5N20 Click to download. File Size, 257.29 Kbytes. Page, 8 Pages. Manufacturer, STMICROELECTRONICS [STMicroelectronics].
STD5N20. 200 V. < 0.7 Ω. 5 A. December 1996. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit. VDS. Drain-source Voltage (VGS = 0). 200. V. VDG R.
STD5N20 MOSFET. Datasheet pdf. Equivalent. Type Designator: STD5N20 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...
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This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on used, ...