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RFM4N35 Product details These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power.
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RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub ...
RFM4N35, RFM4N40, RFP4N35, RFP4N40 4A, 350V and 400V ,2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate po w er Þeld eff ect tr ansistors designed f or applications such as s witching regulators , switching con ve rters , motor dr ivers , rela y dr ivers , and dr ivers f or high po w er bipolar s witching
RFM4N35 4a, 350v And 400v, 2.000 Ohm, N-channel Power MOSFETs . Features. 4A, 350V and 400V rDS(ON) = 2.000 Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards. [ /Title These are N-channel enhancement-mode silicon-gate (RFM4N power field effect transistors
May 3, 2024 · Optocouplers. Width: 6.6 mm. Part # Aliases: 4N35M_NL. Unit Weight: 0.014110 oz. Select at least one checkbox above to show similar products in this category. Show Similar.
- Onsemi / Fairchild
RFM4N35, RFM4N40, RFP4N35, RFP4N40 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
4N35. Description. The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features. Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: 100% for 4N35. Safety and Regulatory Approvals:
+-+Intersil+Corporation&oid=1&h=367&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.Ca_tsl9uZBBEW-SiZzJRkgAAAA%26pid%3DApi&tt=RFM4N35+Datasheet(PDF)+-+Intersil+Corporation&sigr=.M75yCrx80EB&sigit=fBgPpEN1YGxP&sigi=1EAk1tAq7trB&sign=ZxKD.fWyK3JL&sigt=ZxKD.fWyK3JL "RFM4N35 Datasheet(PDF) - Intersil Corporation")
+-+HOPE+Microelectronics+CO.%2C+Ltd.&oid=5&h=367&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.Sfi7xZ6hF4KKonCuW05wmgAAAA%26pid%3DApi&tt=RFM43B+Datasheet(PDF)+-+HOPE+Microelectronics+CO.%2C+Ltd.&sigr=O6QPz8Cv7Y5F&sigit=ZhsKYnY5A8dX&sigi=6b4ytpoWeVRo&sign=spvox.fAW03_&sigt=spvox.fAW03_ "RFM43B Datasheet(PDF) - HOPE Microelectronics CO., Ltd.")
