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Q62702-P84 from www.alldatasheet.com
Features ○ Especially suitable for applications of 950 nm ○ Short switching time (typ. 20 ns) ○ DIL plastic package with high packing density
Features ○ GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ○ High reliability ○ High pulse handling capability
Q62702-P84 from www.datasheet.hk
Part No. BP104F BP104FS Q62702-P84 Q62702-P1646. Description, Silizium-PIN-Fotodiode mit Tageslichtsperrfilter. File Size, 37.76K / 5 Page. Maker
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