Features ○ GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ○ High reliability ○ High radiant intensity

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter, Q62702-P835 datasheet pdf Siemens Download Q62702-P835 datasheet from. Siemens, pdf

Features ○ GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ○ High reliability ○ High pulse handling capability

Part No. SFH405 Q62702-P835. Description, GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter. File Size, 32.50K / 4 Page. Maker, Siemens Semiconductor G..

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Datasheets for P835 ; 19, Q62702-P835, GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter, Siemens ; 20, VTP8350, VTP Process Photodiodes, PerkinElmer Optoelectronics ...

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