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Q62702-P80 from www.alldatasheet.com
Features ○ Especially suitable for applications from 350 nm to 1100 nm ○ BPX 65: high photosensitivity ○ BPX 66: low reverse current (typ. 150 pA)
Features ○ GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ○ High reliability ○ High pulse handling capability
Partname: Q62702-P80. Description: Silizium-PIN-Fotodiode Silicon PIN Photodiode. Manufacturer: Siemens. Datasheet: PDF (207K). Click here to download *) ...
Q62702-P80 from www.datasheet.hk
BPX65 - Silizium-PIN-Fotodiode Silicon PIN Photodiode From old datasheet system ; Part No. BPX65 BPX66 Q62702-P80 Q62702-P27 BPX-65 ; Description, Silizium-PIN- ...
P80 Datasheet. 5MbKb/16P. Part #: FD-P80. Manufacturer: List of Unclassifed ... SIEMENS-Q62702-P80 Datasheet 207Kb/4P, Silizium-PIN-Fotodiode Silicon PIN ...
... Q62702-P27 Q62702-P80. suitable 125 oC1) Applications q Fast optical sensor of high modulation bandwidth Gehäuse Package 18 A3 DIN 41870, planes Glasfenster ...
Q62702-P80. Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. 10.95. Page 2. BPX 65. BPX 66. Semiconductor Group. 343.
In this document: BPX66, Q62702-P27, Q62702-P80. Datasheet Siemens Search datasheet on manufacturer web-site. © 2006 — 2024 ChipFind Ltd. Contact phone, e ...