SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed ...
Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. Learn More.
PSMN070-200B,118 ; Input Capacitance (Ciss) (Max) @ Vds. 4570 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 250W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
Dec 14, 2010 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
Part #: PSMN070-200B. Download. File Size: 149Kbytes. Page: 12 Pages. Description: N-channel TrenchMOS transistor. Manufacturer: NXP Semiconductors.
Aug 11, 1999 · PSMN070-200B, PSMN070-200P. FEATURES. SYMBOL. QUICK REFERENCE DATA. • 'Trench' technology. • Very low on-state resistance. VDSS = 200 V. • Fast ...
In stock
Buy 10Pcs PSMN070-200B TO-263 N-channel TrenchMOS transistor New and original at Aliexpress for . Find more , and products. Enjoy ✓Free Shipping Worldwide!
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed ...
PSMN070-200B MOSFET. Datasheet pdf. Equivalent. Type Designator: PSMN070-200B Type of Transistor: MOSFET Type of Control Channel: N ...
Rating
(10) · In stock
PSMN070-200B,118 Tech Specifications ; Turn-Off Delay Time, 80 ns ; Continuous Drain Current (ID), 35A ; Gate to Source Voltage (Vgs), 20V ; Max Dual Supply Voltage ...