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GENERAL DESCRIPTION. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. Similar Part No. - PHP12N 10E. More results. Similar Description - PHP12N10E.
PowerMOS transistor PHP12N10E STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V voltage VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V IDSS Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj ...
PHP12N10E Transistor Datasheet, PHP12N10E Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
php12n10e . N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications..
Part #: PHP12N10E. Description: PowerMOS transistor. File Size: 72.09 Kbytes. Manufacturer: NXP Semiconductors.
PHP12N10E: 72Kb / 7P: PowerMOS transistor September 1997 Rev 1.000: Search Partnumber : Start with "PHP12N10E"-Total : 87 ( 1/5 Page) NXP Semiconductors: PHP12NQ15T: 111Kb / 12P: N-channel TrenchMOS transistor August 1999 Rev 1.000: Protek Devices: PHP120: 61Kb / 4P: AC POWER BUS VOLTAGE SUPPRESSOR PHP120: 377Kb / 5P: ac power bus voltage ...
Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS (ON) 8 m (VGS = 5 V)g Low thermal resistance. 5.1.