PHN210,118 ; Drain to Source Voltage (Vdss). 30V ; Current - Continuous Drain (Id) @ 25°C · - ; Rds On (Max) @ Id, Vgs. 100mOhm @ 2.2A, 10V ; Vgs(th) (Max) @ Id. 2.8 ...
GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. FEATURES • Dual device
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5PCS NEW PHN210 PHN210T Encapsulation SOP-8 IC Chip ; Quantity. 1 sold. More than 10 available ; Item Number. 324354758154 ; Type. IC ; Accurate description. 5.0.
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Jan 22, 2002 · PHN210. TrenchMOSTM transistor. FEATURES. SYMBOL. QUICK REFERENCE DATA. • Dual ... The PHN210 is supplied in the. 5,6 drain 2. SOT96-1 (SO8) ...
Features, Applications. Dual N-channel enhancement mode TrenchMOSTM transistor. FEATURES Dual device Low threshold voltage Fast switching Logic level ...
PHN210 Datasheet. Part #: PHN210. Datasheet: 109Kb/7P. Manufacturer: NXP Semiconductors. Description: Dual N-channel enhancement mode TrenchMOS transistor.
PHN210,118 ; Drain to Source Voltage (Vdss). 30V ; Current - Continuous Drain (Id) @ 25°C · - ; Rds On (Max) @ Id, Vgs. 100mOhm @ 2.2A, 10V ; Vgs(th) (Max) @ Id. 2.8 ...
Download the PHN210,118 datasheet from NXP Semiconductors. Compliant Surface Mount 15 ns Lead Free Tape & Reel (TR) 8 ns No SVHC 100 mΩ.
PHN210 MOSFET. Datasheet pdf. Equivalent. Type Designator: PHN210 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...