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Specifications ; Collector-Emitter Breakdown Voltage: 30 V ; Collector-Emitter Saturation Voltage: 400 mV ; Dark Current: 100 nA ; Pd - Power Dissipation: 250 mW.
Flat lens for wide radiation angle (OP168, OP268) · Easily stackable on 0.100" (2.54 mm) hole centers · Mechanically and spectrally matched to other OPTEK devices ...
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OP593B Optek / TT Electronics Phototransistors Photo Transistor datasheet, inventory & pricing.
Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 series ...
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OP593B ; Collector-Emitter Breakdown Voltage, 30 V ; Collector-Emitter Saturation Voltage, 400 mV ; Dark Current, 100 nA ; Pd - Power Dissipation, 250 mW ; Minimum ...