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Symbol Parameter OM5N100NK OM6N100NK Units VDS Drain-Source Voltage 1000 1000 V VDGR Drain-Source Voltage (RGS = 20k ) 1000 1000 V ID @ TC = 25°C Continuous Drain Current 5.0 6.0 A ID @ TC = 100°C Continuous Drain Current 3.1 3.7 A IDM Pulsed Drain Current1 24 24 A VGS Gate-Source Voltage ±20 ±20 V PD @ TC = 25°C Maximum Power Dissipation ...
Part #: OM6N100NK. Download. File Size: 19Kbytes. Page: 2 Pages. Description: POWER MOSFETS IN A TO-3 PACKAGE. Manufacturer: List of Unclassifed Manufacturers.
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- OM6N100NK
the OM6N100NK is a silicon N - MOSFET transistor, Uds=1000V, Ids=6A, applications: power switch, switch mode power supply . OM6N100NK transistor datasheet :
OM5N100NK OM6N100NK MIL-S-19500, 10secs. OM6N100NK: 6225S. Abstract: No abstract text available Text: area. OM5N1QONK - OM6N100NK ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Symbol OCR Scan: PDF OM5N100NK QM6N100NK MIL-S-19500, 1000meter 20kSl) 10secs. 6225S: 2N7550. Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 ...
Symbol VDS VDGR = 100°C IDM VGS TC =100°C Junction-To-Case Parameter Drain-Source Voltage Drain-Source Voltage (RGS 20k ) Continuous Drain Current Continuous Drain Current Pulsed Drain OM5N100NK OM6N100NK Units W/°C. Min. Typ. Max. Units Test Conditions Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating ...
Title: OM6N100NK Datasheet, OM6N100NK International Rectifier PDF - IC DATA PDF Created Date: 7/8/2023 8:44:46 AM
Symbol VDS VDGR = 100°C IDM VGS TC =100°C Junction-To-Case Parameter Drain-Source Voltage Drain-Source Voltage (RGS 20k ) Continuous Drain Current Continuous Drain Current Pulsed Drain OM5N100NK OM6N100NK Units W/°C. Min. Typ. Max. Units Test Conditions Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating ...