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NE6500379A-T1 CEL RF JFET Transistors L&S Band GaAs MESFET datasheet, inventory, & pricing.
- CEL
- GaAs
- RF JFET Transistors
- MESFET
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality ...
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The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high
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NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity.
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NE6500379A DESCRIPTION NEC's NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile com... Features • High Output Power • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. • High Power Added Efficiency: 50% typ. @... Published May 7, 2005: Datasheet NE6500379A PDF File
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high