Order today, ships today. NE3509M04-A – RF Mosfet 2 V 10 mA 2GHz 17.5dB 11dBm M04 from CEL. Pricing and Availability on millions of electronic components ...

NE3509M04-A CEL RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET datasheet, inventory, & pricing.

Infrared Reflow. Peak temperature (package surface temperature). : 260°C or below. Time at peak temperature. : 10 seconds or less.

NE3509M04. NE3509M04. Low Noise GaAs FET, HJ-FET. Order NowDownload Manual Dev Tool · EC-NE3509M04 (Ver2) 1.575 GHz LNA Evaluation Board for GPS Application (NF ...

Order today, ships today. NE3509M04-T2-A – RF Mosfet 2 V 10 mA 2GHz 17.5dB 11dBm M04 from CEL. Pricing and Availability on millions of electronic components ...

Part #: NE3509M04-A. Download. File Size: 1MbKbytes. Page: 11 Pages. Description: L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.

FEATURES. • Super low noise figure and high associated gain. NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA.

NE3509M04-T2-A. 3 kpcs/reel. NE3509M04-T2B NE3509M04-T2B-A. Flat-lead 4-pin thin- type super minimold. (M04) (Pb-Free). 15 kpcs/reel. • 8 mm wide embossed ...

Part #: NE3509M04-A ; Part Category: Transistors ; Manufacturer: NEC Corporation ; Description: RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon ...

NE3509M04-A. sku #: 551-NE3509M04-A. CEL, RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET. RF JFET Transistors ...