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Features, Applications: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories. HIGH DENSITY NAND FLASH MEMORIES to 1 Gbit memory array to 32 Mbit spare area Cost effective solutions for mass storage applications or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities 1.8V device: VDD 1.95V 3.0V device: VDD to 3.6V
NAND128-A, NAND256-A, NAND512-A, NAND01G-A22/57Read Memory ArrayEach operation to read the memory area startswith a pointer operation as shown in the PointerOperations section. Once the area (main or spare)has been selected using the Read A, Read B orRead C commands four bus cycles (for 512Mband 1Gb devices) or three bus cycles (for 128Mband 256Mb devices) are required to input the ad- 数据 ...
NAND128R3A0BZA6E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8v/3v, NAND Flash Memories ST72E751N9D1 : 8-BIT Microcontroller (MCU) For Monitors With up to 60K ROM, 2K RAM, ADC, Timer, Infrared, Sync, PWM/BRM, DDC Dma, I2C & Sci, SDIP56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A34/57DC AND AC PARAMETERSThis section summarizes the operating and mea-surement conditions, and the DC and AC charac-teristics of the device. The parameters in the DCand AC characteristics Tables that follow, are de-rived from tests performed under the Measure-mentConditions 数据表 search, datasheets, 电子元件和半导体, 集成电路, 二极 ...
NAND128R3A0BZA6E Datasheet(PDF) 55 Page - STMicroelectronics: No. de pieza: NAND128R3A0BZA6E: Descripción Electrónicos 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
33/57NAND128-A, NAND256-A, NAND512-A, NAND01G-APROGRAM AND ERASE TIMES AND ENDURANCE CYCLESThe Program and Erase times and the number ofProgram/ Erase cycles per block are shown in Ta-ble 14.Table 14. Program, Erase Times and Program Erase Endurance CyclesMAXIMUM RATINGStressing the device above the ratings listed in Ta-ble 15., Absolute Maximum Ratings, may cause 数据表 search, datasheets ...
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