Buy the NANOAMP N08T1630C2BZ2-70 from Elite.Parts after requesting a quote. Call us at +1 (972) 476-1899.

The is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits. It is ...

The is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is ...

N08T1630C2BZ2-70 · NANOAMP-N08T1630C2BZ2-70 Datasheet 253Kb/9P, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit. 12. 12. N08T Distributor. Distributor ...

N08T1630C2BZ2-55, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit, NANOAMP, Request Quote. N08T1630C2BZ2-70, 8Mb Ultra-Low Power Asynchronous CMOS SRAM ...

Full datasheet N08T1630C1BT-70 manufactirer NanoAmp.

Full datasheet N08T1630C2BZ-55 manufactirer NanoAmp.

N08T1630C2BT-70 : 8Mb Ultra-low Power Asynchronous CMOS SRAM 512kx16 bit. N08T1630C2BZ2-70 : 8Mb Ultra-low Power Asynchronous CMOS SRAM 512kx16 bit.

N08T1630C2BZ2-70 · NANOAMP-N08T1630C2BZ2-70 Datasheet 253Kb/9P, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit. 12. 12. 8T1 Distributor. Distributor ...

N08T1630C2BZ2-70 : 8Mb Ultra-low Power Asynchronous CMOS SRAM 512kx16 bit. N08L163WC1C : 8Mb Ultra-low Power Asynchronous CMOS SRAM 512K ¡¿ 16 bit. 0-C D-L ...