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N08L163WC1C. NanoAmp Solutions. 8Mb Ultra-Low Power Asynchronous CMOS SRAM ... 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408- ...
N08L163WC1C · NANOAMP-N08L163WC1C Datasheet 222Kb / 9P, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit. logo. ON Semiconductor, N08L63W2A · ONSEMI ...
N08L6182AB7I Datasheet(PDF) - ON Semiconductor - Alldatasheet.com
www.alldatasheet.com › pdf › ONSEMI
N08L163WC1C · NANOAMP-N08L163WC1C Datasheet 222Kb / 9P, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit. logo. ON Semiconductor, N08L63W2A · ONSEMI ...
Request Quote. N08L163WC1C, 8mb Ultra-low Power Asynchronous Cmos Sram 512k x 16 Bit, NANOAMP, Request Quote. N08L163WC1CT1, 8Mb Ultra-Low Power Asynchronous ...
The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard pac. N08L163WC1C · N08L163WC2A · N08L163WC2C ...
N08L163WC1C · NANOAMP-N08L163WC1C Datasheet 222Kb / 9P, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit. logo. AMI SEMICONDUCTOR, N08M1618L1A · AMI ...
The is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is ...
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit · NanoAmp Solutions, Inc. · Functional Block Diagram · Address · Inputs · A0 - A3 · Word · Address · Decode.