Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

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N04Q1618C2BX-15C Datasheet(PDF) 8 Page - NanoAmp Solutions, Inc. ; Description, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate ...

N04Q1618C2Bx-15C1. N04Q1618C2Bx-70C. 50nA. 50nA. 200nA. 1.2 1.2, 1.8, 3.0 150ns ... N04Q1618C2Bx-85C 200nA. 85ns 0.6 mA @ 1MHz. 1. Part numbers are under ...

N04Q1618C2Bx-15C, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256kx16 bit, NANOAMP, Request Quote. N04Q1618C2Bx ...

Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life. DB Lectro Inc.

N04L1630C2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY ; N04Q1618C2B N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q, 4Mb Ultra- ...

Part No. N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q1618C2BX-15C N04Q1618C2BX-70C. Description, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc ...

The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access. Memory organized as 262,144 words by 16 bits.

Image: N04Q1618C2BX-15C · N04Q1618C2BX-15C · AMI SEMICONDUCTOR, 4mb ultra-low power asynchronous cmos sram w/ dual vcc and vccQ for ultimate power reduction ...