The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed ...
N04Q1618C2BB2-70C, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256kx16 bit, NANOAMP ; N04Q1618C2BB2-70I, 4Mb ...
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N04Q1618C2BB2-70I · NANOAMP-N04Q1618C2BB2-70I Datasheet 298Kb/13P, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction ...
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed ...
N04Q1618C2BB2-70I : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k¡¿16 bit Power Saver Technology.
Part No. N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2BT2-70I. OCR Text ...Absolute Maximum Ratings1 Item voltage on any pin relative to VSS voltage on VCC ...
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY.
静态存储器. 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
N04Q1618C2BB2-70I データシート : NanoAmp Solutions, Inc. -4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction ...