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Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

N04Q1618C2BB2-70C, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256kx16 bit, NANOAMP ; N04Q1618C2BB2-70I, 4Mb ...

N04Q1618C2BB2-70C · NANOAMP-N04Q1618C2BB2-70C Datasheet 298Kb/13P, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction ...

The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed ...

Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the.

N04Q1618C2BB2-70C · NANOAMP · 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K16 · Sin plomo / Cumple con RoHS.

N04Q1618C2BB2-70C : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k¡¿16 bit Power Saver Technology.

N04Q1618C2BB2-15C ; 字数代码, 256000 ; 工作模式, ASYNCHRONOUS ; 最高工作温度, 70 °C ; 最低工作温度.

N04Q1618C2BB2-70C TR. on semiconductor, 4MB, X16, 1.8V DR SRAM. CY7C1041DV33-10ZSXIT. cypress semiconductor, SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns ...