Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
N04Q1618C2BB-15C, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256kx16 bit, NANOAMP, Request Quote. N04Q1618C2BB ...
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N04Q1618C2BB-15C · NANOAMP-N04Q1618C2BB-15C Datasheet 298Kb/13P, 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction ...
描述： N04Q1618C2BB-70C - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY - ...
N04Q1618C2BB-15C : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k¡¿16 bit Power Saver Technology.
N04Q1618C2BB-15C : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k¡¿16 bit Power Saver Technology.
N04Q1618C2BB-15C : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k¡¿16 bit Power Saver Technology.
N04Q1612C2BT2-15C[NANOAMP] · LNK363P[POWERINT] · N04Q1618C2BB-15C[NANOAMP] · MAS9128AS-T[MICRONAS] · MAX4890[MAXIM] · MAX1707ETG[MAXIM] · MAX4891ETJ[MAXIM] ...
N-A-JJ - N04Q1618C2BB-70I | 1 pages, datasheet, pdf, datenblatt, Datasheet Search Site, Datasheet, Datasheet Search,DATASHEETBANK.
N04Q1618C2BB-70C Datasheet : 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K 16 bit POWER SAVER TECHNOLOGY ...