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The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. REFRACTORY/GOLD METALLIZATION. EMITTER BALLASTED. VSWR CAPABILITY ∞:1 @ RATED CONDITIONS. HERMETIC STRIPAC® PACKAGE. POUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz. Similar Part No. - MSC8330 3. More results.
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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS, MSC83303 Datasheet, MSC83303 circuit, MSC83303 data sheet : STMICROELECTRONICS, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geome-try with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated con-ditions. The MSC83303 is designed for Class C
This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the - 3.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case ° C) Collector-Supply Voltage* Junction Temperature Storage Temperature
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Buy MSC83303 by STMicroelectronics N.V.. Find best pricing, stock from factory direct or authorized sources. Immediate delivery, traceability, 3-yr warranty.
MSC83303: Description: RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS: Download 5 Pages: Scroll/Zoom: 100% : Manufacturer: STMICROELECTRONICS [STMicroelectronics] Direct Link: http://www.st.com: Logo
+-+STMicroelectronics&oid=1&h=367&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.oQ2wjefbWrPIVqxBefFlcAAAAA%26pid%3DApi&tt=MSC83303+Datasheet(PDF)+-+STMicroelectronics&sigr=.ItQXt5TND9s&sigit=7Wto0byt2fLj&sigi=5tlHbM9B2u8k&sign=8sLVMFOe1UtV&sigt=8sLVMFOe1UtV "MSC83303 Datasheet(PDF) - STMicroelectronics")
