Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
Part #: MRF6S21140HSR3. Download. File Size: 517Kbytes. Page: 12 Pages. Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral ...
$7.98
MRF6S21140HS MRF6S21140HSR3 2110-2170 MHz, 30 W AVG., 28 V LATERAL N-CHANNEL RF POWER MOSFETs 1PCS/LOT. 1 sold. Delivery. Shipping: US $5.29.
Designed for W- CDMA base station applications with frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To applications ...
MRF6S21140HS Datasheet. Part #: MRF6S21140HSR3. Datasheet: 517Kb/12P. Manufacturer: Freescale Semiconductor, Inc. Description: RF Power Field Effect ...
$7.99 In stock
MRF6S21140HS MRF6S21140HSR3 2110-2170 MHz, 30 W AVG., 28 V LATERAL N-CHANNEL RF POWER MOSFETs 1PCS/LOT. 1 sold. Delivery. Shipping: US $5.29.
Rating
MRF6S21140HS MRF6S21140HSR3 ; ECAD Module ; Brand: Freescale ; DateCode: 08+ ; Package / Case: SMD ...
The MRF6S21140HR3 and MRF6S21140HSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and ...
Part No. MRF6S21140 MRF6S21140HR3 MRF6S21140HSR3 ; Description, N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外 ; File Size, 460.17K / 12 Page.