Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-.
The MRF6S21100HR3 and MRF6S21100HSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and ...
Order today, ships today. MRF6S21100HSR3 – RF Mosfet 28 V 950 mA 2.11GHz ~ 2.17GHz 15.9dB 23W NI-780S from NXP USA Inc.. Pricing and Availability on ...
Designed for W - CDMA base station applications with frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To ...
$8.00
100%Original MRF6S21100H MRF6S21100HS MRF6S21100HR3 MRF6S21100HSR3 [ FET RF 68V 15.9dB 23W 2.11GHz-2.17GHz ]. Color : MRF6S21100HS. MRF6S21100HMRF6S21100HS.
... MRF6S21100HSR3, MRF6S21100HR3: Trans RF MOSFET N-CH 68V 3-Pin NI-780 T/R, MRF6S21100HR5: FET RF 68V 2.17GHZ NI-780, MRF6S21100HSR3: FET RF 68V 2.17GHZ NI-780S.
MRF6S21100HSR3 ; Configuration; Single ; Transistor Polarity; N-Channel ; Drain Source Breakdown Voltage; 68 V ; Gate Source Breakdown Voltage; - 0.5 V, 12 V ...
5420266-MRF6S21100HSR3. Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. ECAD Model: Datasheet: MRF6S21100HSR3. Quick ...
Part No. MRF6S21100HR3 MRF6S21100HSR3 ; Description, 2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
MRF6S21100HSR3 · FREESCALE-MRF6S21100HSR3 Datasheet 670Kb/15P, RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. MRF6S21100NBR1 ...