The MRF18090BR3 and MRF18090BSR3 are designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, ...
MRF18090BR3 MRF18090BSR3. 1. RF Device Data. Freescale Semiconductor. RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed ...
Part #: MRF18090BR3. Download. File Size: 393Kbytes. Page: 8 Pages. Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral ...
Part No. MRF18090BR3 ; Description, LATERAL N-CHANNEL RF POWER MOSFETs ; File Size, 409.16K / 8 Page ; Maker, Freescale Semiconductor ; Part · MRF18090A.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. ... R3 Suffix = 250 ...
Designed for GSM and GSM EDGE base station applications with frequencies from to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier ...
MRF18090BR3 · FREESCALE-MRF18090BR3 Datasheet 393Kb/8P, RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. logo. Motorola, Inc ...
€16.49
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Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral ...