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The MRF174 is a RF MOSFET power N–channel en-hancement mode field–effect transistor (FET) designed for UHF power amplifier applications. M/A-COM RF MOSFETs feature a vertical structure with a planar design, thus avoid-ing the processing difficulties associated with V–groove power FETs.
- 836KB
- 12
Features. N–Channel Enhancement Mode MOSFET. 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc. Facilitates Manual Gain Control, ALC and Modulation Techniques. Excellent Thermal Stability; ideally Suite for Class A Operations.
3 days ago · MRF174 Advanced Semiconductor, Inc. RF MOSFET Transistors RF Transistor datasheet, inventory, & pricing.
- Advanced Semiconductor, Inc.
- RF MOSFET Transistors
- Advanced Semiconductor, Inc.
- N-Channel
Ads · MRF174
Order today, ships today. MRF174 – RF Mosfet 28 V 2 A 150MHz 11.8dB 125W 211-11, Style 2 from MACOM Technology Solutions. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- MACOM Technology Solutions
- 1465-1166-ND
- RF MOSFET 28V 211-11
- MACOM Technology Solutions
DESCRIPTION: The. ASI MRF174. is a gold metallized . N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal. applications to 200 MHz. FEATURES: •. PG. = 9.0 dB min. at 150 MHz . •. OmnigoldTM. Metalization System. •. Class-A. MAXIMUM RATINGS. ID. 13 A. VDSS. 65 V. VGS. ±40. VDGR. 65 V. PDISS. 270 W @ TC = 25 °C. TJ.
MRF174 Product details. . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc. Output Power = 125 Watts. Minimum Gain = 9.0 dB. Efficiency = 50% (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperation.
MRF174. RF Transistor by MACOM ( 309 more products) Download Datasheet Request Quote. The MRF174 from MACOM is a RF Transistor with Frequency 5 to 200 MHz, Power 50.97 dBm, Power (W) 125.03 W, Gain 9 dB, Power Gain (Gp) 9 to 11.8 dB. Tags: Flanged.
