Part #: K4H560838E-VCB3. Download. File Size: 297Kbytes. Page: 23 Pages. Description: 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS ...
Missing: VCB0 | Show results with:VCB0
Package, TSOP2(66). Outpack. RoHS, Leaded. Voltage, 2.5 V. Temperature, 0 C~+85 C. Speed, 133 MHZ. Std. Pack Qty. Std. Carton. Number Of Words, 32M.
Description, 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS ; File Size ...
K4H560838E-VCB0 : 128mb DDR Sdram. AT-LC-U-SM-05-B : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ...
Part #: K4H560838E-TCB0 ; Manufacturer: Samsung Semiconductor Division ; Description: DDR1 DRAM, 32MX8, 0.75ns, CMOS, PDSO66 ; Access Mode, FOUR BANK PAGE BURST.
Missing: VCB0 | Show results with:VCB0
Description, 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) ; File Size, 212.16K / 24 Page. View it Online.
K4H560838E-ULB3, 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant). K4H560838E-VCB0, 256Mb E-die DDR SDRAM Specification 54 sTSOP-II ...
K4H560838E-VCB0 · SAMSUNG-K4H560838E-VCB0 Datasheet 297Kb/23P, 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant). K4H560838E-VCB3 ...
Feb 19, 2024 · 厂商型号. K4H560838E-VLB0. 功能描述. 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant). 文件大小. 297.75 Kbytes.
K4H560838E-VCB0 [SAMSUNG] ; 生产厂家：, SAMSUNG SEMICONDUCTOR ; 描述和应用：. DDR DRAM, 32MX8, CMOS, PDSO54,. 时钟动态存储器双倍数据速率光电二极管内存集成电路.