VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333. • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400. • Double-data-rate architecture; ...

Part #, K4H511638C-UCB3. Download, K4H511638C-UCB3 Click to download. File Size, 212.57 Kbytes. Page, 24 Pages. Manufacturer, SAMSUNG [Samsung semiconductor].

512Mb C-die DDR SDRAM Specification Others with the same file for datasheet: K4H510438C-LA2, K4H510438C-LB0, K4H510438C-LB3, K4H510438C-LCC, K4H510438C-UC

Get quote for SAMSUNG K4H511638C-UC/LBO (DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 2.5 V) from AB Sunshine Electronics. Show Cross and FFFE parts.

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation

K4H560438E-UC/LAA : 128mb DDR Sdram. AT-ST-U-M5-18-A : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ...

DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, ...

Partname: K4H511638C-UC ; Description: 512Mb C-die DDR SDRAM Specification ; Manufacturer: Samsung Electronic ; Datasheet: PDF (367K). Click here to download ...

DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 January. 2005 Rev.

Full datasheet K4H511638C-UCB3 manufactirer Samsung.